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| HL6335G/36G Circular Beam Low Operating Current ADE-208-1419C (Z) Rev.3 Mar. 2002 Description The HL6335/36G are 0.63 m band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source for laser levelers, laser scanners and optical equipment for measurement. Application * Laser leveler * Laser scanner * Measurement Features * Optical output power * Visible light output * Low aspect ratio * TM mode oscillation Package Type * HL6335/36G: G2 Internal Circuit * HL6335G 1 3 : 5 mW CW : 635 nm Typ : 1.2 Typ (almost circular beam) * Low operating current : 25 mA Typ * Operating temperature : +50C Internal Circuit * HL6336G 1 3 PD LD PD LD 2 2 HL6335G/36G Absolute Maximum Ratings (TC = 25C) Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Symbol PO PO(Pulse) VR(LD) VR(PD) Topr Tstg Value 5 6* 2 30 -10 to +50 -40 to +85 Unit mW mW V V C C Note: Pulse condition : Pulse width 1 s, duty = 50% Optical and Electrical Characteristics (TC = 25C) Item Optical output power Threshold current Slope efficiency Operating current Operating voltage Lasing wavelength Beam divergence parallel to the junction Beam divergence parpendicular to the junction Aspect ratio Monitor current Symbol PO Ith s IOP VOP p // /// IS Min 5 -- 0.5 -- -- 630 13 16 -- 0.03 Typ -- 20 0.8 25 2.4 635 17 20 1.2 0.07 Max -- 30 1.1 40 2.7 640 25 25 1.5 0.12 Unit mW mA mW/mA mA V nm deg. deg. -- mA 3 (mW) / (I(4mW) - I(1mW)) PO = 5 mW PO = 5 mW PO = 5 mW PO = 5 mW PO = 5 mW PO = 5 mW PO = 5 mW, VR(PD) = 5 V Test Condition Kink free Notes: 1. Care must be taken in laser diodes handling to prevent optical damage caused by forward surges as well as by ESD. 2. The wavefront performance is not guaranteed. 3. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a board. Rev.3, Mar. 2002, page 2 of 10 HL6335G/36G Typical Characteristic Curves Opticai Output Power vs. Foward Current 5 TC = 10C 4 25C 3 40C Monitor Current vs.Optical Output Power 0.10 0.08 VR(PD) = 5V TC = 25C Optical output power, PO (mW) 50C Monitor current, IS (mA) 60 0.06 2 0.04 1 0 0.02 0 0 10 20 30 40 50 Foward current, IF (mA) 0 1 2 3 4 Optical output power, PO (mW) 5 Slope Efficiency vs. The Case Temperature 1.4 Threshold Current vs. The Case Temperature 100 Slope efficiency, s (mW/mA) 1.0 0.8 0.6 0.4 0.2 0 -10 0 10 20 30 40 Case temperature, TC (C) 50 Threshold current, Ith (mA) 1.2 50 20 10 -10 0 10 20 30 40 Case temperature TC (C) 50 Rev.3, Mar. 2002, page 3 of 10 HL6335G/36G Monitor Current vs. The Case Temperature 0.10 PO = 5mW VR = 5V 0.08 Lasing Wavelength vs. The Case Temperature 645 PO = 5mW Lasing wavelength, lp (nm) Monitor current, IS (mA) 640 0.06 635 0.04 0.02 630 0 -10 0 10 20 30 40 Case temperature, TC (C) 50 625 -10 0 10 20 30 40 Case temperature TC (C) 50 Lasing Spectrum TC = 25C PO = 5mW Relative intensity Polarization ratio Polarization Ratio vs. Optical Output Power 250 TC = 25C NA = 0.55 200 150 PO = 3mW 100 50 PO = 1mW 625 630 635 640 Wavelength, lp (nm) 645 0 0 1 2 3 4 Optical output power, PO (mW) 5 Rev.3, Mar. 2002, page 4 of 10 HL6335G/36G Astigmastism vs. Optical Output Power 5 Far Field Pattern Relative intensity TC = 25C NA = 0.55 Astigmastism, AS (m) 1.0 PO = 5mW 0.8 TC = 25C Perpendicular 0.6 0.4 Parallel 0.2 0 -40 -30 -20 -10 0 10 20 Angle, (deg.) 30 40 4 3 2 1 0 0 4 1 2 3 Optical output power, PO (mW) 5 Electrostatic Destruction 100 80 Survival rate (%) Survival rate (%) Electrostatic Destruction 100 80 60 40 20 0 Reverce (C : 100pF, R : 1.5k) N=10pcs IO 10% judgment 0 0.5 1.0 Applied voltage (kV) 1.5 60 40 20 0 Forward (C : 100pF, R : 1.5k) N=10pcs IO 10% judgment 0 100 200 Applied voltage (V) 300 Rev.3, Mar. 2002, page 5 of 10 HL6335G/36G Package Dimensions Unit: mm 9.0 +0 -0.025 1.0 0.1 (0.65) (90) 3.5 0.2 0.3 Glass 12 *1 7.2 +0.3 -0.2 6.2 0.2 (2.0) Emitting Point 0.4 +0.1 -0 3 - 0.45 0.1 1 2 3 12 * 1 1 3 2 2.54 0.35 Note: 1. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a board. Hitachi Code JEDEC JEITA Mass (reference value) LD/G2 -- -- 1.1 g Rev.3, Mar. 2002, page 6 of 10 1.5 0.1 91 2.45 HL6335G/36G The Cautions on the Handing of HL6335G/36G As laser diode differ from silicon devices, the area of safe operation (ASO) of laser diodes is not decided by power consumption alone, but optical output must be considered from view point of optical damage. These products are more sensitive to static electricity or an surge current than the conventional product. The following is test data of ESD (electric static damage). The operating condition should be within 5 mW and the working please should be keep small static electricity level such as 20 V less and small surge current such as 40 mA less from out. 1. Electrostatic destructive examination data : HL6335G : HL6312G 100 Survival rate (%) Survival rate (%) 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Applied voltage VCC (kV) N=5 R = 1.5k C = 100pF Reverse 80 60 40 20 0 0 600 800 200 400 Applied voltage VCC (V) N=5 R = 1.5k C = 100pF Forward 100 Survival rate (%) 100 Survival rate (%) 80 60 40 N = 5 R=0 20 C = 200pF Forward 0 0 20 40 60 80 100 120 Applied voltage VCC (V) 80 60 40 20 0 0 N=5 R=0 C = 200pF Reverse 0.5 1.0 1.5 2.0 2.5 3.0 Applied voltage VCC (kV) R VCC C DUT Step stress test (5 times/voltage) Failure criteria IOP 10% Rev.3, Mar. 2002, page 7 of 10 HL6335G/36G 2. Clamp Capacitance vs. ESD of HL6335G/36G Applied voltage, VCC (V) 600 500 400 300 200 100 10 0 R = 0, C = 200pF 0.002 0.004 0.006 0.008 Capacitance, CO (F) 0.010 Step stress tast (5 times/voltage) Failure criteria IOP 10% VCC C R = 1.5k, C = 100pF R DUT RO = 2.2k CO 3. Applied puls width vs. Applied current Applied current, IF (mA) 120 100 distribution of IOP (mA) PW IF TC = 25C 1 shot n = 10pcs 80 60 40 20 0 10 100 1m 10m 100m Applied puls width, PW (s) 1 4. Catastrophic optical damage of HL6335G/36G 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 Destructive optical output power, PCOD (mW) Rev.3, Mar. 2002, page 8 of 10 N (pcs) HL6335G/36G Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. Rev.3, Mar. 2002, page 9 of 10 HL6335G/36G Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright (c) Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 5.0 Rev.3, Mar. 2002, page 10 of 10 |
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